sup/sub15p01-52 vishay siliconix document number: 71085 s-20966?rev. c, 01-jul-02 www.vishay.com 1 p-channel 8-v (d-s), 175 c mosfet product summary v ds (v) r ds(on) ( ) i d (a) 0.052 @ v gs = ?4.5 v ?15 ?8 0.070 @ v gs = ?2.5 v ?10 0.105 @ v gs = ?1.8 v ?10.5 SUP15P01-52 sub15p01-52 drain connected to tab s g d p-channel mosfet to-220ab top view gds to-263 s g top view d absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds ?8 gate-source voltage v gs 8 v continuous drain current t c = 25 c ?15 continuous drain current (t j = 175 c) t c = 125 c i d ?8.7 pulsed drain current i dm ?25 a avalanche current i ar ?10 repetitive avalanche energy b l = 0.1 mh e ar 5 mj t c = 25 c (to-220ab and to-263) 25 d power dissipation t a = 25 c (to-263) c p d 2.1 w operating junction and storage temperature range t j , t stg ?55 to 175 c thermal resistance ratings parameter symbol typical maximum unit junction-to-ambient pcb mount (to-263) c r thja 58 70 junction-to-case r thjc 5 6 c/w junction-to-lead r thjl 16 20 c/w notes: a. package limited. b. duty cycle 1%. c. when mounted on 1? square pcb (fr-4 material). d. see soa curve for voltage derating.
sup/sub15p01-52 vishay siliconix www.vishay.com 2 document number: 71085 s-20966 ? rev. c, 01-jul-02 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = ? 250 a ? 8 gate threshold voltage v gs(th) v ds = v gs , i d = ? 250 a ? 0.45 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = ? 6.4 v, v gs = 0 v ? 1 zero gate voltage drain current i dss v ds = ? 6.4 v, v gs = 0 v, t j = 125 c ? 50 dss v ds = ? 6.4 v, v gs = 0 v, t j = 175 c ? 150 v ds = ? 5 v, v gs = ? 4.5 v ? 25 on-state drain current a i d(on) v ds = ? 5 v, v gs = ? 2.5 v ? 10 a v gs = ? 4.5 v, i d = ? 10 a 0.043 0.052 v gs = ? 4.5 v, i d = ? 10 a, t j = 125 c 0.065 drain-source on-state resistance a r ds(on) v gs = ? 4.5 v, i d = ? 10 a, t j = 175 c 0.075 ds(on) v gs = ? 2.5 v, i d = ? 5 a 0.070 v gs = ? 1.8 v, i d = ? 2 a 0.105 forward transconductance a g fs v ds = ? 5 v, i d = ? 10 a 16 s dynamic b input capacitance c iss 1300 output capacitance c oss v gs = 0 v, v ds = ? 4 v, f = 1 mhz 430 pf reversen transfer capacitance c rss 245 total gate charge c q g 10.5 15 gate-source charge c q gs v ds = ? 4 v, v gs = ? 4.5 v, i d = ? 10 a 1.6 nc gate-drain charge c q gd ds gs d 2 turn-on delay time c t d(on) 10 20 rise time c t r v dd = ? 4 v, r l = 0.22 16 25 turn-off delay time c t d(off) v dd = ? 4 v, r l = 0.22 i d ? 15 a, v gen = ? 4.5 v, r g = 2.5 30 45 ns fall time c t f d gen g 25 40 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s ? 15 pulsed current i sm ? 25 a forward voltage a v sd i f = ? 15 a, v gs = 0 v ? 1.5 v reverse recovery time t rr 45 75 ns peak reverse recovery current i rm(rec) i f = ? 15 a, di/dt = 100 a/ s ? 1 ? 1.5 a reverse recovery charge q rr f 0.023 0.056 c notes: a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature.
sup/sub15p01-52 vishay siliconix document number: 71085 s-20966 ? rev. c, 01-jul-02 www.vishay.com 3 typical characteristics (25 c unless noted) 0 2 4 6 8 048121620 0.00 0.04 0.08 0.12 0.16 0.20 0 5 10 15 20 25 0 400 800 1200 1600 2000 02468 0 5 10 15 20 25 0 5 10 15 20 25 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) ? on-resistance ( q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) r ds(on) ) v gs v gs ? gate-to-source voltage (v) ? transconductance (s) g fs 25 c 125 c t c = ? 55 c v ds = 4 v i d = 10 a v gs = 1.8 v v gs = 2.5 v c iss c oss c rss t c = ? 55 c 25 c 125 c 3 v 4 v 3.5 v 2 v 1 v 1.5 v 4.5 v 0 12 24 36 48 60 012345 2.5 v v gs = 4.5 v
sup/sub15p01-52 vishay siliconix www.vishay.com 4 document number: 71085 s-20966 ? rev. c, 01-jul-02 typical characteristics (25 c unless noted) 0.0 0.3 0.6 0.9 1.2 1.5 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage (normalized) ? on-resistance ( t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) r ds(on) ) ? source current (a) i s 30 10 1 v gs = 4.5 v i d = 10 a t j = 25 c t j = 150 c thermal ratings 0.1 1.0 10.0 100.0 0.1 1.0 10.0 safe operating area 1 ms 10 ms 100 ms dc, 1 s 100 s 0 3 6 9 12 15 18 0 25 50 75 100 125 150 175 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 1 normalized effective transient thermal impedance 10 maximum avalanche and drain current vs. case t emperature t c ? case temperature ( c) v ds ? drain-to-source voltage (v) ? drain current (a) i d ? drain current (a) i d 0.2 0.1 0.05 0.02 duty cycle = 0.5 t c = 25 c single pulse limited by r ds(on) single pulse
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